PART |
Description |
Maker |
KM616FS4110ZI-10 KM616FS4110ZI-7 |
100ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM 70ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
|
Samsung Electronic
|
CMP0417AA8-F70I CMP0417AA8-I |
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
EM6160FR8DS-85LF EM6160FS32DS-85LF EM6160FU16DS-85 |
256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc Emerging Memory & Logic...
|
A62S8316 A62S8316G-70S A62S8316G-70SI A62S8316V-70 |
256K X 16 BIT LOW VOLTAGE CMOS SRAM 70ns; 50mA 256K x 16bit low voltage CMOS SRAM
|
AMIC Technology Corporation AMICC[AMIC Technology]
|
HY62SF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
HY62SF16404C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
HY62UF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
HY62LF16404D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
CMP0417AAX-E CMP0417AAX-F70E CMP0417AA1 CMP0417AA2 |
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
IS62LV25616LL |
256K x 16 Low Voltage, Ultra Low Power CMOS SRAM(256K x 16 低压,极低功耗CMOS静态RAM)
|
Integrated Silicon Solution, Inc.
|
K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|